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698 pcs
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698 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology 24AA08HT-I/MNY is an 8 Kbit Electrically Erasable PROM (EEPROM) designed for serial communication via an I2C compatible interface. This device supports clock frequencies up to 400 kHz and operates on a single supply voltage ranging from 1.7V to 5.5V.
Key electrical characteristics include a low read current of 1 mA maximum and a standby current of 1 µA maximum, contributing to its low-power CMOS technology. The EEPROM offers a memory organization of 256 x 8 bits, with a page write buffer capable of holding up to 16 bytes. It features a typical page write time of 3 ms and boasts over 1 million erase/write cycles with data retention exceeding 200 years.
This component is housed in an 8-TDFN (2x3) surface-mount package, specifically an 8-WFDFN Exposed Pad. The operating temperature range is specified as -40°C to +85°C, making it suitable for industrial environments. The device also includes features like Schmitt Trigger inputs for noise suppression and output slope control to minimize ground bounce.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 24AA08HT-I/MNY has a memory size of 8 Kbit.
The 24AA08HT-I/MNY is an EEPROM memory.
The 24AA08HT-I/MNY uses an I2C interface.
The maximum clock frequency supported by the 24AA08HT-I/MNY is 400 kHz.
The operating voltage range for this device is 1.7V to 5.5V.
The operating temperature range is -40°C to +85°C (TA).
The 24AA08HT-I/MNY is a surface mount device.
The device is supplied in an 8-TDFN (2x3) package, also described as an 8-WFDFN Exposed Pad.
The access time for this EEPROM is 900 ns.
The write cycle time is 5ms.
The memory organization is 256 x 8 x 4.
The typical read current is 1 mA.
The typical standby current is 1 µA.
The typical page write time is 3 ms.
The page write buffer size is 16 Bytes.
This EEPROM can withstand more than 1 Million erase/write cycles.
The data retention period is greater than 200 years.
The ESD protection level is greater than 4,000V.