| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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254 pcs
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254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
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| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
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The Toshiba 1SV279,H3F is a variable capacitance diode (varactor) manufactured using silicon epitaxial planar technology. It is specifically designed for voltage-controlled oscillator (VCO) applications in the VHF and UHF frequency bands.
Key electrical characteristics include a reverse voltage rating of 15V, reverse current of 3 nA maximum, and a typical capacitance ratio of 2.5 (C2V / C10V). The diode offers low series resistance of 0.2 Ω typical (0.4 Ω max) at 5V and 470 MHz, enabling efficient high-frequency operation.
The device is available in a surface-mount SC-79 (SOD-523) package, suitable for compact designs. Operating junction temperature range is up to 125°C, with storage from -55°C to 125°C.
The reverse voltage (VR) is rated at 15V absolute maximum.
The typical capacitance ratio C2V/C10V is 2.5.
It is available in SC-79 (SOD-523) surface mount package.
The typical series resistance (rs) is 0.2 Ω at VR=5V and f=470 MHz, with a maximum of 0.4 Ω.
The junction temperature can reach up to 125°C, and storage temperature range is -55 to 125°C.