| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,400 pcs
|
3400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Reverse Recovery Time | |
| Reverse Voltage |
The Renesas 1SS82 is a silicon rectifier diode designed for various electronic applications. This component is housed in a DO-35 package, making it suitable for through-hole mounting.
Key electrical specifications include a maximum output current of 200mA and a maximum reverse voltage rating (V(RRM)) of 250V. The diode also has a maximum power dissipation of 400mW and a reverse recovery time of 100ns. Its maximum operating temperature is rated at 175°C, indicating robustness in thermal performance.
This rectifier diode is manufactured by Renesas Electronics Corporation, a company formed from the merger of NEC Electronics Corporation and Renesas Technology Corporation. The part number 1SS82 is associated with Hitachi Semiconductor in some documentation, reflecting historical company affiliations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum output current for the 1SS82 diode is 200mA.
The 1SS82 diode has a maximum reverse voltage rating of 250V.
The maximum power dissipation for the 1SS82 diode is 400mW.
The 1SS82 diode has a maximum operating temperature of 175°C.
The 1SS82 diode is supplied in a DO-35 package.