| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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669,630 pcs
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669630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Toshiba 1SS402TE85L,F is a silicon epitaxial Schottky barrier diode array designed for discrete semiconductor applications. This component features two independent diodes within a single package.
Key electrical characteristics include a maximum DC reverse voltage (Vr) of 20V and an average rectified current (Io) per diode of 50mA. The forward voltage (Vf) is a maximum of 550mV at 50mA, and the reverse leakage current (Ir) is a low 500nA at 20V.
This diode is configured as a Schottky barrier type, offering small signal speed performance. It is housed in an SC-82 package and designed for surface mount technology, supplied on tape and reel.
Ideal for general-purpose rectification and switching applications where low forward voltage drop and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) is 20V.
The average rectified current (Io) per diode is 50mA.
The maximum forward voltage (Vf) is 550mV at 50mA.
It is a silicon epitaxial Schottky barrier diode.
It is supplied in an SC-82 package on tape and reel for surface mounting.