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1SS362TE85LF Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array with 1 pair series connection, rated for 80V reverse voltage and 100mA average forward current per diode.
Mfr Part #:

1SS362TE85LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array with 1 pair series connection, rated for 80V reverse voltage and 100mA average forward current per diode.
✓ Total Stock: 723,200 pcs

1SS362TE85LF Available from 1 distributor

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✓ Non-Authorised
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Romaks Technologies ✓
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723,200 pcs
On Request
723200 pcs On Request 1 On Request On Request On Request On Request On Request
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1SS362TE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Diode Configuration
Forward Voltage
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Package / Case
Peak Forward Current
Power Dissipation
Reverse Current
Reverse Recovery Time
Reverse Recovery Time (trr)
Reverse Voltage
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
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1SS362TE85LF Description

Short technical summary and product information.

The Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array configured as 1 pair series connection. It is designed for ultra-high-speed switching applications and features a fast reverse recovery time of 4 ns (max, typ 1.6 ns).

 

Key electrical ratings include a reverse voltage of 80 V, peak reverse voltage of 85 V, average forward current of 100 mA per diode, and a forward voltage of 1.2 V max at 100 mA. The device also offers a low total capacitance of 0.9 pF typ and a surge current capability of 1 A.

 

The diode array is housed in a compact SC-75 (SOT-416) surface-mount package with SSM supplier device package designation. It is suitable for high-density PCB designs and operates over a temperature range up to 125°C ambient.

1SS362TE85LF Quick Information

Product Type: Diode Array
Series: 1SS362
Canonical Name: Toshiba 1SS362TE85LF Silicon Epitaxial Planar Diode Array
Subcategory: General Purpose Switching Diode Array

1SS362TE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

1SS362TE85LF Features

  • 80V reverse voltage rating.
  • 100mA average forward current per diode.
  • 4 ns reverse recovery time.
  • 0.9 pF typical total capacitance.
  • SC-75 surface-mount package.

1SS362TE85LF Applications

  • Ultra-high-speed switching circuits.
  • Signal rectification in portable devices.
  • Protection clamping in low-voltage designs.

1SS362TE85LF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the 1SS362TE85LF?

The reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.

What is the forward current rating?

The average forward current (IO) is 100 mA per diode, with a peak forward current (IFM) of 300 mA.

What is the forward voltage at rated current?

The forward voltage (VF) is 1.2 V max at IF = 100 mA, with a typical value of 0.97 V.

What is the reverse recovery time?

The reverse recovery time (trr) is 4 ns max, typically 1.6 ns.

What package does the 1SS362TE85LF come in?

It is supplied in an SC-75 (SOT-416) surface-mount package, with supplier device package designation SSM.

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