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1SS362TE85LF Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array with 1 pair series connection, rated for 80V reverse voltage and 100mA average forward current per diode.
Mfr Part #:

1SS362TE85LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array with 1 pair series connection, rated for 80V reverse voltage and 100mA average forward current per diode.
Total Stock: 723,200 pcs

1SS362TE85LF Available from 1 distributors

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723,200 pcs
723200 pcs On Request 1 On Request On Request On Request On Request On Request

1SS362TE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Average Forward Current
Current
Diode Configuration
Forward Voltage
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Package / Case
Peak Forward Current
Peak Reverse Voltage
Power Dissipation
Reverse Current
Reverse Recovery Time
Reverse Recovery Time (trr)
Reverse Voltage
SVHC Present
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Surge Current
Tape & Reel
Technology
Total Capacitance
Voltage
Weight

1SS362TE85LF Description

Short technical summary and product information.

The Toshiba 1SS362TE85LF is a silicon epitaxial planar diode array configured as 1 pair series connection. It is designed for ultra-high-speed switching applications and features a fast reverse recovery time of 4 ns (max, typ 1.6 ns).

 

Key electrical ratings include a reverse voltage of 80 V, peak reverse voltage of 85 V, average forward current of 100 mA per diode, and a forward voltage of 1.2 V max at 100 mA. The device also offers a low total capacitance of 0.9 pF typ and a surge current capability of 1 A.

 

The diode array is housed in a compact SC-75 (SOT-416) surface-mount package with SSM supplier device package designation. It is suitable for high-density PCB designs and operates over a temperature range up to 125°C ambient.

1SS362TE85LF Quick Information

Product Type: Diode Array
Series: 1SS362
Canonical Name: Toshiba 1SS362TE85LF Silicon Epitaxial Planar Diode Array
Subcategory: General Purpose Switching Diode Array

1SS362TE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

1SS362TE85LF Features

  • 80V reverse voltage rating.
  • 100mA average forward current per diode.
  • 4 ns reverse recovery time.
  • 0.9 pF typical total capacitance.
  • SC-75 surface-mount package.

1SS362TE85LF Applications

  • Ultra-high-speed switching circuits.
  • Signal rectification in portable devices.
  • Protection clamping in low-voltage designs.

1SS362TE85LF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the 1SS362TE85LF?

The reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.

What is the forward current rating?

The average forward current (IO) is 100 mA per diode, with a peak forward current (IFM) of 300 mA.

What is the forward voltage at rated current?

The forward voltage (VF) is 1.2 V max at IF = 100 mA, with a typical value of 0.97 V.

What is the reverse recovery time?

The reverse recovery time (trr) is 4 ns max, typically 1.6 ns.

What package does the 1SS362TE85LF come in?

It is supplied in an SC-75 (SOT-416) surface-mount package, with supplier device package designation SSM.

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