| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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123,000 pcs
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123000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,472 pcs
|
1472 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1SS351-TB-E is an RF Schottky diode from On Semiconductor, configured as a 1 pair series connection. It is designed for high-frequency applications requiring fast switching and low forward voltage drop.
Key electrical specifications include a maximum DC reverse voltage of 5V and an average rectified current of 30mA. The diode exhibits a low capacitance of 0.9pF at 0.2V and 1MHz, making it suitable for RF signal detection and mixing circuits.
The device is packaged in a TO-236-3, SC-59, SOT-23-3 compatible 3-CP surface-mount package, supporting standard SMD assembly processes. The operating junction temperature is rated up to 125°C.
The maximum DC reverse voltage (Vr) is 5V.
The average rectified current (Io) is 30mA.
The device is available in a TO-236-3, SC-59, SOT-23-3 compatible 3-CP surface-mount package.
The capacitance is 0.9pF at 0.2V reverse bias and 1MHz test frequency.
The maximum junction temperature is 125°C.