DistyParts Icon
1SS337 The Toshiba 1SS337 is a Silicon Epitaxial Planar Type Diode. It offers a maximum output current of 200mA and a reverse standoff voltage of 80V.
Mfr Part #:

1SS337

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba 1SS337 is a Silicon Epitaxial Planar Type Diode. It offers a maximum output current of 200mA and a reverse standoff voltage of 80V.
✓ Total Stock: 137,633 pcs
$ Price Range: $0.99

1SS337 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
120,533 pcs
On Request
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
17,100 pcs
On Request
17100 pcs On Request 1 On Request On Request / On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

1SS337 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Forward Voltage
Lead Style
Reverse Recovery Time
SVHC Present
View Similar Products (0)

1SS337 Description

Short technical summary and product information.

The Toshiba 1SS337 is a Silicon Epitaxial Planar Type Diode designed for high-speed switching applications. It features a maximum output current of 200mA and a reverse standoff voltage of 80V.

 

Key electrical characteristics include a forward voltage of 1.2V and a maximum forward surge current of 6A. The diode exhibits a reverse recovery time of 20ns, making it suitable for fast switching circuits. Its maximum power dissipation is rated at 150mW.

 

Operating within a temperature range up to 150°C, the 1SS337 is manufactured by Toshiba. This component is identified by part number 1SS337 and is a type of switching diode.

1SS337 Quick Information

Product Type: Diode
Canonical Name: Toshiba 1SS337 Silicon Epitaxial Planar Type Diode
Subcategory: Silicon Epitaxial Planar Type Diode

1SS337 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

1SS337 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

1SS337 Features

  • Maximum output current of 200mA.
  • Reverse standoff voltage is 80V.
  • Forward voltage is 1.2V.
  • Reverse recovery time of 20ns.
  • Maximum power dissipation of 150mW.

1SS337 Applications

  • Ultra high speed switching diode applications
  • Used in silicon epitaxial planar circuits
  • Suitable for 80V reverse standoff designs
  • Ideal for 200mA output current circuits
  • Common in 20ns reverse recovery systems

1SS337 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum output current for the 1SS337 diode?

The maximum output current for the 1SS337 diode is 200mA.

What is the reverse standoff voltage of the 1SS337?

The reverse standoff voltage of the 1SS337 is 80V.

What is the forward voltage for the 1SS337 diode?

The forward voltage for the 1SS337 diode is 1.2V.

What is the maximum forward surge current for the 1SS337?

The maximum forward surge current for the 1SS337 is 6A.

What is the reverse recovery time of the 1SS337 diode?

The reverse recovery time of the 1SS337 diode is 20ns.

What is the maximum power dissipation for the 1SS337?

The maximum power dissipation for the 1SS337 is 150mW.

What is the maximum operating temperature for the 1SS337?

The maximum operating temperature for the 1SS337 is 150°C.

Home
Account

Categories