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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,468 pcs
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9468 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Io) | |
| Capacitance (Ct) | |
| Capacitance @ Vr, F | |
| Current | |
| DC Reverse Voltage (VR) | |
| Forward Voltage (Vf) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (TJ) | |
| Package / Case | |
| Peak Forward Current (IFM) | |
| Peak Reverse Voltage (VRM) | |
| Power Dissipation (Pm) | |
| Reverse Current (IR) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Storage Temperature (Tstg) | |
| Supplier Device Package | |
| Surge Current (Isurge) | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Voltage |
The 1SS133T-77 is a silicon epitaxial planar switching diode from ROHM Semiconductor, designed for high-speed switching applications. It is housed in a glass sealed DO-34 (axial) envelope (MSD) and offers through-hole mounting with axial leads.
Key electrical specifications include a DC reverse voltage of 80V, peak reverse voltage of 90V, average rectified current of 130mA, forward voltage of 1.2V at 100mA, peak forward current of 400mA, surge current of 600mA for 1 second, reverse current of 0.5µA at 80V, reverse recovery time of 4ns, capacitance of 2pF at 0.5V/1MHz, and power dissipation of 300mW.
The diode operates over a junction temperature range up to 175°C and storage temperature from -65°C to +175°C. It is suitable for high-speed switching circuits, general purpose rectification, and signal processing applications.
The DC reverse voltage is 80V, and the peak reverse voltage is 90V.
The average rectified current is 130mA.
The forward voltage is 1.2V at 100mA forward current.
The reverse recovery time is 4ns (typical) at VR=6V, IF=10mA, RL=50Ω.
It comes in a DO-34 (axial) glass sealed envelope (MSD).
The junction temperature is up to 175°C, and storage temperature range is -65°C to +175°C.
The surge current is 600mA for 1 second.