| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,224 pcs
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22224 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Ambient Temperature | |
| Forward Current | |
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| Reverse Current | |
| Reverse Voltage | |
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| Tape & Reel | |
| Thermal Resistance |
The NXP Semiconductors 1PS79SB31 is a planar Schottky barrier diode designed for ultra-high-speed switching, voltage clamping, protection circuits, low current rectification, and low power consumption applications. It is housed in an ultra-small and flat lead SOD523 (SC-79) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum forward current of 200 mA and a maximum reverse voltage of 30 V. The forward voltage is typically low, with values such as 255-300 mV at 10 mA and 130-190 mV at 0.1 mA, both at 25°C ambient temperature. The diode capacitance is typically 20-25 pF at 1 V and 1 MHz.
This device operates within a junction temperature range of -65°C to 125°C and an ambient temperature range of -65°C to 125°C. The thermal resistance from junction to ambient is 450 K/W.
The 1PS79SB31 is suitable for various applications requiring efficient and fast diode performance in a compact form factor, such as in hand-held devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current for the 1PS79SB31 is 200 mA.
The maximum reverse voltage for the 1PS79SB31 is 30 V.
The typical forward voltage at 10 mA for the 1PS79SB31 is 255 mV.
The 1PS79SB31 diode is in a SOD523 package.
The operating temperature range for the 1PS79SB31 is -65 to 125 °C.