| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Voltage |
The 1N916 is a small signal diode manufactured by On Semiconductor. It is designed for general purpose switching and rectification applications.
Electrical characteristics include a maximum repetitive reverse voltage of 100V, average rectified forward current of 200mA, and DC forward current of 300mA. Forward voltage is 1V at 10mA. Reverse leakage current is 0.025µA at 20V and 5µA at 75V. Reverse recovery time is 4ns. Power dissipation is 500mW.
The device is available in a DO-204AH (DO-35) through-hole package with axial leads, supplied in bulk. Operating junction temperature range is -55°C to +175°C, with storage temperature from -65°C to +200°C.
Applications include high-speed switching, general purpose rectification, and signal processing circuits.
100V.
200mA.
1V at 10mA.
4ns.
DO-204AH (DO-35) through-hole with axial leads.
1.0A for 1s pulse, 4.0A for 1µs pulse.
Junction temperature -55°C to +175°C, storage -65°C to +200°C.