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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
101 pcs
|
101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Forward Current | |
| Capacitance @ Vr, F | |
| Current | |
| DC Forward Current | |
| Forward Voltage | |
| Lead Style | |
| Maximum Repetitive Reverse Voltage | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| Package / Case | |
| Packing Method | |
| Power Dissipation | |
| Reverse Leakage Current | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Total Capacitance | |
| Voltage |
The 1N914BTR is a small signal silicon diode designed for general purpose and high-speed switching applications. Manufactured by ON Semiconductor, it offers a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 200 mA. The DC forward current rating is 300 mA, with a forward voltage of 1 V at 100 mA. Reverse leakage current is extremely low at 0.025 µA at 20 V.
The diode features a fast reverse recovery time of 4 ns, making it suitable for high-frequency switching circuits. Total capacitance is 4 pF at 0 V and 1 MHz. It can handle a non-repetitive peak forward surge current of 1 A for a 1-second pulse. Power dissipation is 500 mW. Operating junction temperature range is -55°C to 175°C, and storage temperature range is -65°C to 200°C.
The 1N914BTR is packaged in a DO-204AH (DO-35) through-hole package with axial leads. It is supplied in tape and reel packing. The diode is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
100 V.
200 mA.
1 V at 100 mA.
4 ns.
DO-204AH (DO-35) through-hole.
-55°C to 175°C.
1 A (pulse width 1 s).