| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,427 pcs
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7427 pcs | On Request | 1 | On Request | On Request | 1043+ | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microsemi Corporation 1N6627US is a military-qualified ultrafast recovery rectifier diode, ideal for high-reliability applications where failure is not an option. This surface mount device is part of the 1N6626US through 1N6631US series, offering working peak reverse voltages from 200 to 1000 volts.
Constructed with a voidless, hermetically sealed glass package and internal Category I metallurgical bonds, the 1N6627US ensures extreme robustness and triple-layer passivation. It boasts an average rectified forward current rating of 1.75A at 25°C ambient temperature and a peak surge current capability of 75A. The operating junction temperature range is -65°C to +150°C.
This rectifier is suitable for applications requiring extremely fast switching and low forward loss, such as switching power supplies. Its inherent radiation hardness and controlled avalanche capability further enhance its suitability for demanding environments. The device is available in the D-5B package for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the 1N6627US is 1000V.
The average rectified forward current at 25°C is 1.75A for 1N6626US thru 1N6628US and 1.40A for 1N6629US thru 1N6631US.
The peak forward surge current is 75A (except 1N6631 which is 60A) at 25°C.
The operating junction temperature range is -65°C to +150°C.
The 1N6627US is in a D-5B surface mount package.