| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Material | |
| Operating Temperature | |
| Reverse Recovery Time | |
| SVHC Present |
The 1N659 is a silicon diode from Vishay Semiconductor, designed for various electronic applications. It features a maximum reverse voltage (VRRM) of 50V and a maximum forward voltage (Vf Max.) of 1.0V. The average forward current handling capability (If AVG Max.) is 100mA.
This diode is supplied in a DO7 package, which is a common glass-encased package. It is not designed for surface mounting. The operating temperature range extends up to a maximum of 150°C.
Key electrical characteristics include a typical leakage current (Ir @25°C) of 5.0µA and a typical reverse recovery time (t(rr)) of 300ns. These specifications make the 1N659 suitable for general-purpose rectification and switching applications where moderate voltage and current ratings are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRRM) for the 1N659 diode is 50V.
The maximum forward voltage (Vf Max.) for the 1N659 silicon diode is 1.0V.
The 1N659 diode has a maximum average forward current (If AVG Max.) of 100mA.
The typical reverse recovery time (t(rr)) for the 1N659 diode is 300ns.
The 1N659 diode can operate at temperatures up to a maximum of 150°C.
The 1N659 diode is supplied in a DO7 package.
No, the 1N659 diode is not a surface-mounted device.