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18 pcs
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18 pcs | On Request | 6 | On Request | On Request | On Request | On Request | On Request |
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The Microsemi Corporation 1N647-1 is a hermetically sealed silicon rectifier diode designed for various applications. It offers a maximum reverse voltage of 400V and a total power dissipation of 500mW.
Key electrical characteristics include a forward voltage drop of up to 1.00V at 400mA and 25°C, and a reverse leakage current as low as 0.050µA at 400V and 25°C. The diode operates within a temperature range of -65°C to +175°C.
Constructed with a metallurgically bonded, double plug design within a glass package conforming to the DO-35 outline, this component is suitable for through-hole mounting. The lead material is copper clad steel with a tin/lead finish.
This rectifier is available in JAN, JANTX, and JANTXV specifications per MIL-PRF-19500/240, indicating its suitability for demanding applications requiring high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (VRWM) for the 1N647-1 is 400V.
The maximum forward voltage (VF) at 400mA and 25°C is 1.00V.
The maximum reverse leakage current (IR) at 400V and 25°C is 0.050µA.
The operating temperature range for the 1N647-1 is -65°C to +175°C.
The 1N647-1 is supplied in a DO-35 glass package.