| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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122 pcs
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122 pcs | On Request | 1 | On Request | On Request | 05+28 | On Request | On Request |
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The Microsemi Corporation 1N6461US is a unidirectional transient voltage suppressor (TVS) diode designed for circuit protection.
This device features a series of breakdown voltages ranging from 5.6V to 54V, measured at specific test currents. It can handle significant transient events, with maximum peak impulse currents reaching up to 315A at an 8/20 µs waveform and 56A at a 10/1000 µs waveform. The clamping voltages vary depending on the peak current, with a maximum of 9V at 10/1000 µs.
The temperature coefficient of the breakdown voltage is also specified, indicating how the breakdown voltage changes with temperature. This parameter is important for applications operating across a wide temperature range.
As a hermetically sealed component, the 1N6461US is suitable for demanding environments. Its voidless construction ensures reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the 1N6461US is 5.6V.
The maximum peak impulse current for the 1N6461US is 315A at an 8/20 µs waveform.
The maximum clamping voltage for the 1N6461US is 78.5V at a peak impulse current of 6A (10/1000 µs).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.