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260 pcs
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260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N6158A from Microsemi Corporation is a bi-directional Transient Voltage Suppressor (TVS) diode. It is designed to protect sensitive electronic components from voltage transients.
Key electrical specifications include a reverse stand-off voltage of 35.8V, a minimum breakdown voltage of 44.7V, and a clamping voltage of 64.6V at 23.2A. The device can handle a peak pulse power dissipation of up to 1500W and a continuous power dissipation of 5W. The leakage current is a maximum of 0.005µA.
This TVS diode is constructed with a silicon semiconductor material and operates over a temperature range of -55°C to 175°C. It is available in various package types, including G-MELF and Axial (DO-204AE), suitable for surface mount and through-hole applications.
The 1N6158A is also noted for its military specifications, with versions like JAN1N6158A, JANTX1N6158A, and JANTXV1N6158A available, indicating suitability for demanding environments.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse stand-off voltage is 35.8V.
The minimum breakdown voltage is 44.7V.
The clamping voltage is 64.6V.
The peak pulse power dissipation is 1500W.
The operating temperature range is -55°C to 175°C.
The 1N6158A is available in G-MELF and Axial packages.