| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N6063A is a bidirectional silicon Transient Voltage Suppressor (TVS) diode manufactured by GS. This component is designed to protect sensitive electronic equipment from transient overvoltage conditions.
Key electrical specifications include a nominal stand-off voltage of 82V, with a minimum breakdown voltage of 95V and a maximum of 105V. The diode offers a nominal clamping voltage of 137V. It can handle a non-repetitive peak pulse power dissipation of up to 1500W, with a continuous power dissipation limit of 1W. The reverse leakage current is a maximum of 5uA, and it has a fast response time of 5ns.
The 1N6063A is constructed with silicon as the diode element material and operates bidirectionally. It is packaged in a DO-13 case with axial wire leads, suitable for through-hole mounting.
This TVS diode is suitable for applications requiring protection against voltage transients, such as in power supply lines or data communication interfaces.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal stand-off voltage of the 1N6063A is 82V.
The 1N6063A has a non-repetitive peak pulse power dissipation of 1500W.
The breakdown voltage for the 1N6063A ranges from a minimum of 95V to a maximum of 105V.
The 1N6063A is available in a DO-13 package with axial wire leads.
The 1N6063A has a maximum response time of 5ns.
