| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,510 pcs
|
1510 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Diode Type | |
| Forward Current | |
| Forward Voltage | |
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| Operating Temperature | |
| Output Current | |
| Reverse Current | |
| Reverse Voltage |
The 1N5821 is a Schottky barrier rectifier diode manufactured by N-A. It is designed with a metal-to-silicon junction, providing a low forward voltage drop and fast reverse recovery times. This diode is housed in a DO-27 axial lead epoxy case and is suitable for through-hole mounting.
Key electrical characteristics include a maximum forward voltage of 0.5V and a maximum output current of 3.0A. It can handle a non-repetitive peak forward current of up to 80.0A. The operating temperature range is from -55°C to 125°C. The maximum reverse voltage is 30.0V, with a maximum reverse current of 200.0 µA.
This component is designed for applications requiring low voltage and high frequency, such as inverters and reverse polarity protection circuits. Its features like extremely low forward voltage, low stored charge, and low power loss contribute to high efficiency in power applications.
The 1N5821 is Pb-free, aligning with environmental standards. Its robust construction and performance make it a reliable choice for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward voltage is 0.5 V.
The maximum output current is 3.0 A.
The maximum reverse voltage is 30.0 V.
The package is DO-27 with through-hole mounting and 2 pins.
The operating temperature range is -55°C to 125°C.