| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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374 pcs
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374 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N5821 is a Schottky barrier rectifier diode manufactured by GI, utilizing a metal-to-silicon junction for optimized performance. This diode is characterized by its extremely low forward voltage drop of 0.5V maximum and a non-repetitive peak forward current of 80A.
With a repetitive peak reverse voltage rating of 30V and a maximum reverse current of 200µA, the 1N5821 is suitable for various applications. Its operating temperature range spans from -55°C to 125°C, ensuring reliability in diverse environments. The diode's design emphasizes low stored charge and majority carrier conduction, contributing to low power loss and high efficiency.
Packaged in a DO-27 axial lead epoxy case, the 1N5821 is designed for through-hole mounting. Its applications include low voltage and high frequency inverters, as well as reverse polarity protection circuits. The 'Pb-Free' designation indicates compliance with lead-free manufacturing standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward voltage is 0.5 V.
The maximum output current is 3 A.
The repetitive peak reverse voltage is 30 V.
The operating temperature range is -55 °C to 125 °C.
The 1N5821 is available in a DO-27 package.
The diode type is RECTIFIER DIODE.
The non-repetitive peak forward current is 80 A.