| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,388 pcs
|
9388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,675 pcs
|
1675 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Manufacturer Name | |
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| Peak Forward Surge Current | |
| SVHC Present |
The CJ 1N5819W is a Schottky Barrier Diode designed for efficient power conversion. It offers a maximum repetitive peak reverse voltage (VRRM) of 40V and a maximum DC blocking voltage (VR) of 40V. The diode can handle an average forward rectified current (IF(AV)) of 1.0A at a lead length of 0.375 inches and a temperature of 90°C.
Key electrical characteristics include a typical forward voltage (VF) of 0.50V at 1A and a typical junction capacitance (CJ) of 110pF at 1MHz. The operating and storage temperature range is from -55°C to +150°C.
This device is housed in a SOD-123FL molded plastic package, suitable for surface mounting. It is a Pb-Free device, indicating compliance with environmental regulations. The terminals are plated and solderable per MIL-STD-750, Method 2026.
Applications for this diode include power supplies, switching circuits, and general rectification where low power loss and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the 1N5819W is 40V.
The 1N5819W has a maximum average forward rectified current (IF(AV)) of 1.0A at 90°C with a 0.375-inch lead length.
The typical forward voltage (VF) for the 1N5819W at 1A and 25°C is 0.50V.
The 1N5819W is supplied in a SOD-123FL package.
The operating junction and storage temperature range for the 1N5819W is -55°C to +150°C.
Yes, the 1N5819W is a Pb-Free device.