1N5817 1N5817 is a Schottky barrier rectifier diode from On Semiconductor, rated for 20V reverse voltage and 1A forward current. It features a low forward voltage of 450mV and is housed in a through-hole DO-41 package.
Mfr Part #:

1N5817

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
1N5817 is a Schottky barrier rectifier diode from On Semiconductor, rated for 20V reverse voltage and 1A forward current. It features a low forward voltage of 450mV and is housed in a through-hole DO-41 package.
Total Stock: 8,320 pcs

1N5817 Available from 4 distributors

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1N5817 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Rectified Current (Io)
Capacitance (Cj)
Capacitance @ Vr, F
Case Material
Current
Diode Type
ESD Human Body Model
ESD Machine Model
Forward Surge Current (IFSM)
Forward Voltage (Vf)
Lead Solder Temperature
Lead Style
Mounting Type
Operating Temperature
Operating Temperature Range (Tj)
Package / Case
Peak Operating Junction Temperature
Polarity
Reverse Voltage (Vrrm)
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Technology
Termination Style
Thermal Resistance (RθJA)
Voltage
Weight

1N5817 Description

Short technical summary and product information.

The 1N5817 is a Schottky barrier rectifier diode from On Semiconductor, designed for low-voltage, high-frequency applications. It is part of the 1N5817/1N5818/1N5819 series and offers a peak repetitive reverse voltage of 20V and an average rectified forward current of 1A. The forward voltage is extremely low at 450mV at 1A, reducing power loss and improving efficiency.

 

This diode features a fast recovery time of less than 500ns, making it suitable for switching applications. It also has a low junction capacitance of 110pF at 4V and 1MHz, and a forward surge current rating of 25A for one cycle. The device is ESD rated with machine model >400V and human body model >8000V.

 

The 1N5817 is packaged in a through-hole DO-41 (DO-204AL) axial lead package, with epoxy molded case and polarity indicated by a band. It is lead-free (Pb-Free) and RoHS compliant. The operating junction temperature range is -65°C to 125°C, with a thermal resistance of 80°C/W.

1N5817 Quick Information

Product Type: Schottky Rectifier Diode
Canonical Name: 1N5817 Schottky Barrier Rectifier Diode 20V 1A DO-41
Subcategory: Schottky Rectifier Diode

1N5817 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: Non-Compliant
Lead Free: Yes

1N5817 Features

  • Schottky barrier for low forward voltage.
  • Rated for 20V reverse voltage and 1A.
  • Fast recovery time less than 500ns.
  • Through-hole DO-41 axial lead package.
  • Lead-free and RoHS compliant.

1N5817 Applications

  • Used in low-voltage high-frequency inverters.
  • Ideal for freewheeling diode applications.
  • Suitable for polarity protection circuits.
  • Works in switching power supplies.

1N5817 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the 1N5817?

The peak repetitive reverse voltage (VRRM) is 20V.

What is the forward current rating of the 1N5817?

The average rectified forward current (Io) is 1A.

What is the forward voltage drop of the 1N5817?

The forward voltage (Vf) is 450mV at 1A.

What is the recovery time of the 1N5817?

The diode has a fast recovery time of less than 500ns at forward current >200mA.

What package is the 1N5817 available in?

The 1N5817 is available in a through-hole DO-41 (DO-204AL) axial lead package.

What is the operating temperature range of the 1N5817?

The operating junction temperature range is -65°C to 125°C.

What is the peak surge current rating of the 1N5817?

The forward surge current (IFSM) is 25A for one cycle.

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