BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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58 pcs
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58 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| SVHC Present |
The 1N5809US is a surface mount superfast recovery diode manufactured by N-A. It offers a working reverse voltage of up to 100V and an average forward current of 6A at 75°C. Key electrical characteristics include a low forward voltage drop of 0.875V at 4A and a very fast reverse recovery time of 30nS.
This diode is suitable for applications requiring quick switching and low power loss. It features a hermetically sealed non-cavity construction and soft, non-snap off recovery characteristics. The device is qualified to MIL-PRF-19500/477 and is available in JANTX, JANTXV, and JANS versions.
The 1N5809US is packaged for surface mounting and is available in trays and tape and reel packaging. Its operating temperature range is -65°C to +175°C.
| Qty | Low | High |
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| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N5809US diode has a working reverse voltage of 100V and a repetitive reverse voltage of 100V.
The 1N5809US diode has an average forward current rating of 6A at 75°C.
The reverse recovery time for the 1N5809US diode is a maximum of 30nS.
The maximum forward voltage drop for the 1N5809US diode is 0.875V at 4A and 25°C.
The 1N5809US diode is supplied in a surface mount package.