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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
193 pcs
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193 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Surge Current (IFSM) | |
| Forward Voltage (Vf) (Max) @ If | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (Junction-to-End Cap) | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage |
The 1N5809US is a military-qualified ultrafast recovery rectifier diode from Microchip Technology (formerly Microsemi). It is rated for a maximum reverse voltage of 100V and an average rectified current of 3A at 55°C ambient. The device offers a fast reverse recovery time of 30ns and a low forward voltage of 875mV at 4A, making it suitable for high-frequency switching applications.
This diode is housed in a hermetically sealed, void-less glass SQ-MELF package (B case) designed for surface mount assembly. It features a junction operating temperature range up to 175°C, a forward surge current capability of 125A, and typical thermal resistance of 6.5°C/W junction-to-case and 52°C/W junction-to-ambient. The technology is standard silicon with quadruple-layer passivation and internal Category 1 metallurgical bonds.
Typical applications include switching power supplies, military and aerospace electronics, and other high-reliability systems requiring extremely fast switching and low forward loss. The device is also available in commercial RoHS-compliant versions.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.04 | $8.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) is 100V.
The average rectified current (Io) is 3A at 55°C ambient.
The maximum forward voltage is 875mV at a forward current of 4A.
The maximum reverse recovery time (trr) is 30ns.
The 1N5809US is available in a surface mount SQ-MELF package (B case).
The operating junction temperature range is -65°C to 175°C.
The maximum forward surge current (Ifsm) is 125A.