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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current (Io) | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Surge Current (IFSM) | |
| Forward Voltage (Vf) | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Package Type | |
| Packaging Type | |
| Recovery Speed | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance Junction to Lead (RθJL) | |
| Voltage | |
| Working Peak Reverse Voltage (Vrwm) |
The 1N5806US/TR is a general purpose ultrafast recovery rectifier diode from Microchip Technology, designed for high-reliability applications. It is rated for a working peak reverse voltage of 150V and an average rectified current of 1A. The device features a reverse recovery time of 25ns, enabling efficient switching in high-frequency circuits. The forward voltage is 975 mV at 2.5A, and the junction capacitance is 25 pF at 10V, 1MHz. The diode can operate over a wide temperature range from -65°C to 175°C. It is packaged in a surface-mount SQ-MELF (D-5A) package, suitable for automated assembly. The device also has a forward surge current capability of 35A and a thermal resistance (junction-to-lead) of 36°C/W, making it robust for demanding power supply and rectification applications.
25 ns.
Working peak reverse voltage of 150V.
1A.
975 mV at 2.5 A.
SQ-MELF, A (supplier device package D-5A) surface mount package.