1N5806US/TR The 1N5806US/TR is a 150V, 1A ultrafast recovery rectifier diode from Microchip Technology. It features a 25ns reverse recovery time and is housed in a surface-mount SQ-MELF (D-5A) package.
Mfr Part #:

1N5806US/TR

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The 1N5806US/TR is a 150V, 1A ultrafast recovery rectifier diode from Microchip Technology. It features a 25ns reverse recovery time and is housed in a surface-mount SQ-MELF (D-5A) package.
Total Stock: 500 pcs

1N5806US/TR Available from 1 distributor

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1N5806US/TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Rectified Current (Io)
Capacitance
Capacitance @ Vr, F
Current
Forward Surge Current (IFSM)
Forward Voltage (Vf)
Military Grade
Mounting Type
Operating Temperature
Package / Case
Package Type
Packaging Type
Recovery Speed
Reverse Recovery Time (trr)
Speed
Supplier Device Package
Technology
Thermal Resistance Junction to Lead (RθJL)
Voltage
Working Peak Reverse Voltage (Vrwm)

1N5806US/TR Description

Short technical summary and product information.

The 1N5806US/TR is a general purpose ultrafast recovery rectifier diode from Microchip Technology, designed for high-reliability applications. It is rated for a working peak reverse voltage of 150V and an average rectified current of 1A. The device features a reverse recovery time of 25ns, enabling efficient switching in high-frequency circuits. The forward voltage is 975 mV at 2.5A, and the junction capacitance is 25 pF at 10V, 1MHz. The diode can operate over a wide temperature range from -65°C to 175°C. It is packaged in a surface-mount SQ-MELF (D-5A) package, suitable for automated assembly. The device also has a forward surge current capability of 35A and a thermal resistance (junction-to-lead) of 36°C/W, making it robust for demanding power supply and rectification applications.

1N5806US/TR Quick Information

Product Type: Rectifier Diode
Series: 1N5806
Canonical Name: 1N5806US/TR - Ultrafast Recovery Rectifier Diode
Subcategory: Ultrafast Recovery Rectifier

1N5806US/TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

1N5806US/TR Features

  • 150V working peak reverse voltage rating.
  • 1A average rectified current capability.
  • 25ns ultrafast reverse recovery time.
  • Surface mount SQ-MELF (D-5A) package.
  • Operates from -65°C to 175°C.

1N5806US/TR Applications

  • Ideal for high-reliability military and aerospace power supplies.
  • Used in ultrafast switching power supplies.
  • Suitable for high-frequency rectification circuits.
  • Applicable in space and harsh environment systems.

1N5806US/TR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the reverse recovery time of the 1N5806US/TR?

25 ns.

What is the maximum reverse voltage rating?

Working peak reverse voltage of 150V.

What is the average rectified current rating?

1A.

What is the forward voltage drop?

975 mV at 2.5 A.

What package is the 1N5806US/TR available in?

SQ-MELF, A (supplier device package D-5A) surface mount package.

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