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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 1352 | On Request | On Request | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage | |
| Halogen Free | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The 1N5806US is an ultrafast recovery rectifier diode from Microchip Technology, part of the 1N5802/1N5804/1N5806 series. It is rated for a working peak reverse voltage of 150V and an average rectified current of 1A. The diode features a reverse recovery time of 25ns and a forward voltage of 875mV at 1A. The junction capacitance is 25pF measured at 10V and 1MHz.
This device is hermetically sealed in a voidless glass D-5A MELF package, designed for surface mount applications. It utilizes quadruple-layer passivation and internal Category 1 metallurgical bonds, ensuring high reliability in demanding environments. The construction is inherently radiation hard, making it suitable for aerospace and military applications.
Typical applications include switching power supplies, high-frequency rectification, and other circuits requiring extremely fast switching with low forward loss. The diode offers controlled avalanche capability with peak reverse power handling and high surge current capacity.
The 1N5806US has a working peak reverse voltage of 150V.
The average rectified current is 1A.
The forward voltage is 875 mV at 1A.
The reverse recovery time is 25 ns.
It comes in a D-5A MELF (surface mount) package.
The junction capacitance is 25 pF at 10V and 1MHz.