| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N5660AE3 from Microsemi Corporation is a TVS (Transient Voltage Suppressor) Diode, categorized under ESD Suppressors. This component is designed to protect sensitive electronic components from voltage transients.
Key electrical characteristics include a working voltage of 111V, a breakdown voltage of 124V, and a clamping voltage of 179V. It can handle a peak pulse current of 8.4A and a peak pulse power dissipation of 1W. The device operates with a single channel.
This TVS diode is specified for a wide operating temperature range, from -65 C to +175 C. It is supplied in a DO-13-2 package with axial termination, suitable for surface mounting.
The 1N5660AE3 is RoHS3 Compliant, has an MSL of 1, and is REACH Unaffected. Its packaging is provided on a Cut Tape, Reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal working voltage for the 1N5660AE3 is 111V.
The nominal breakdown voltage for the 1N5660AE3 is 124V.
The nominal clamping voltage for the 1N5660AE3 is 179V.
The peak pulse current for the 1N5660AE3 is 8.4A.
The peak pulse power dissipation for the 1N5660AE3 is 1W.
The 1N5660AE3 operates from a minimum of -65 C to a maximum of +175 C.
The 1N5660AE3 is supplied in a DO-13-2 package with axial termination.