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895 pcs
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895 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Thomson-CSF 1N5630A is a hermetically sealed silicon avalanche diode designed for transient voltage suppression applications. It features a glass passivated junction, providing excellent clamping capability and low zener impedance.
Key electrical characteristics include a peak pulse power rating of 1500 Watts (10 x 1000µs) at 25°C and a 1 watt steady-state power rating. The diode has a response time of 1 x 10^-12 seconds. Its operating and storage temperature range is from -55°C to +150°C.
The 1N5630A is housed in a metal hermetically sealed DO-13 package with axial leads. The leads are solderable per MIL-STD-202 Method 208. The part is recognized under the Underwriters Laboratories Components Program, with Agency File Number E128662.
This series offers a breakdown voltage range from 6.8 to 200 volts, with the 1N5630A specifically having a minimum breakdown voltage of 6.12V and a maximum of 7.48V at 10mA. The maximum reverse leakage current at its 5.5V stand-off voltage is 1000µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N5630A has a peak pulse power rating of 1500 Watts for a 10 x 1000µs waveform at 25°C.
The operating and storage temperature range for the 1N5630A is -55°C to +150°C.
The minimum breakdown voltage for the 1N5630A is 6.12V and the maximum is 7.48V at 10mA.
The reverse stand-off voltage for the 1N5630A is 5.5V.
The 1N5630A is supplied in a DO-13 metal hermetically sealed package.
The standard package quantity for the 1N5630A is 500 pieces.