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126 pcs
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126 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N5621US from Microchip Technology is a general purpose diode designed for various electronic applications. It offers a high reverse voltage rating of 800V and can handle an average rectified current of 1A.
Key electrical characteristics include a maximum forward voltage of 1.6V at 3A and a fast recovery time of 300ns. The diode also has a typical capacitance of 20pF at 12V and 1MHz, and a reverse leakage current of 500nA at 800V.
This component is housed in a SQ-MELF, A package, also known as D-5A, and is designed for surface mounting. Its robust specifications make it suitable for power supply circuits, switching applications, and general rectification tasks where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the 1N5621US diode is 800V.
The 1N5621US diode has an average rectified current of 1A.
The typical forward voltage of the 1N5621US diode at 3A is 1.6V.
The reverse recovery time for the 1N5621US diode is 300ns.
The 1N5621US diode is in a SQ-MELF, A package, also known as D-5A.
The 1N5621US diode is designed for surface mounting.