| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel |
The JAN1N5619US is a general purpose diode manufactured by Microchip Technology. This component is designed for a maximum reverse voltage of 600V and can handle an average rectified current of 1A.
Key electrical characteristics include a forward voltage of 1.6V at 3A and a fast recovery time of less than 500ns. The reverse leakage current is rated at 500nA at 600V, with a capacitance of 25pF at 12V and 1MHz.
This diode is suitable for military applications, indicated by its 'Military' grade and MIL-PRF-19500/429 qualification. It is packaged in a D-5A (SQ-MELF, A) surface mount case and supplied in bulk packaging.
Its fast recovery speed and robust voltage/current ratings make it a reliable choice for various electronic circuits requiring efficient rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the JAN1N5619US diode is 600V.
The average rectified current (Io) rating for the JAN1N5619US diode is 1A.
The maximum forward voltage (Vf) for the JAN1N5619US diode at 3A is 1.6V.
The reverse recovery time (trr) for the JAN1N5619US diode is 250ns.
The JAN1N5619US diode is in a D-5A (SQ-MELF, A) surface mount package.
Yes, the JAN1N5619US diode has a Military grade and MIL-PRF-19500/429 qualification.