| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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152 pcs
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152 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The JAN1N5619US from Microchip Technology is a general purpose diode designed for various electronic applications. It features a maximum reverse voltage of 600V and an average rectified current of 1A.
The forward voltage drop is a maximum of 1.6V at 3A. This diode has a fast recovery speed, specified as less than or equal to 500ns for currents greater than 200mA, with a reverse recovery time of 250ns. The reverse leakage current is 500 nA at 600V.
This component has a capacitance of 25pF at 12V and 1MHz. It is qualified to MIL-PRF-19500/429 military standards and operates as a standard technology device.
The JAN1N5619US is packaged in a D-5A surface mount package (SQ-MELF, A) and is supplied in bulk.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) for the JAN1N5619US diode is 600 V.
The JAN1N5619US has an average rectified current (Io) rating of 1A.
The maximum forward voltage (Vf) for the JAN1N5619US at 3A is 1.6 V.
The reverse recovery time (trr) for the JAN1N5619US diode is 250 ns.
The JAN1N5619US diode is supplied in bulk packaging and features a surface mount D-5A (SQ-MELF, A) package.
Yes, the JAN1N5619US is qualified to MIL-PRF-19500/429 military standards.