| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52 pcs
|
52 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
This JAN1N5619US diode from Microchip Technology is designed for general purpose applications. It offers a maximum reverse voltage of 600V and an average rectified current of 1A.
The forward voltage is a maximum of 1.6V at 3A, with a fast recovery speed. The reverse leakage current is 500 nA at 600V. The diode has a capacitance of 25pF at 12V and 1MHz.
This component is suitable for surface mount applications and comes in a D-5A package. It meets military grade standards and is qualified under MIL-PRF-19500/429.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 600V.
The average rectified current is 1A.
The maximum forward voltage is 1.6V at 3A.
The reverse recovery time is 250 ns.
The diode is in a surface mount SQ-MELF, A package, with a supplier device package of D-5A.