LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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124 pcs
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124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The GS 1N5615 is a fast recovery silicon rectifier designed for general-purpose applications where fast reverse recovery times and high reliability are essential. It is housed in a hermetically sealed, glass-passivated package.
This rectifier series offers a range of Peak Repetitive Reverse Voltage ratings from 200V (1N5615) up to 1000V (1N5623). It has an Average Forward Current rating of 1.0A at 55°C and a Peak Forward Surge Current of 50A for an 8.3ms pulse.
The operating and storage junction temperature range is -65°C to +200°C. Electrical characteristics include a maximum forward voltage of 1.2V at 1.0A and a junction capacitance of 35pF at 12V and 130kHz. The reverse leakage current is a maximum of 0.5μA at rated VRRM.
The 1N5615 is mounted in a GPR-1A case, suitable for through-hole mounting.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage for the 1N5615 is 200V.
The average forward current for the 1N5615 is 1.0A at 55°C.
The maximum forward voltage for the 1N5615 is 1.2V at 1.0A.
The junction capacitance of the 1N5615 is 35pF under test conditions of 12V reverse voltage and 130kHz frequency.
The reverse recovery time for the 1N5615 is 150ns under the specified test conditions.
The operating and storage junction temperature range for the 1N5615 is -65°C to +200°C.
The 1N5615 is in a GPR-1A case.
