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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,750 pcs
|
3750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Current | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Forward Surge Current | |
| Forward Voltage | |
| Junction Temperature Range | |
| Lead Finish | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Peak Repetitive Reverse Voltage | |
| Polarity | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Termination Style | |
| Thermal Resistance | |
| Voltage | |
| Weight |
The 1N5614 is a standard recovery rectifier diode from the 1N5614-1N5622 series, designed for high-reliability applications. It is rated for a working peak reverse voltage of 200V and an average rectified current of 1A. The forward voltage is 1.1V at 1A, and the reverse recovery time is 2µs. The device can handle a forward surge current of 30A (8.3ms half-sine) and has a typical junction capacitance of 23pF at 5V.
Constructed with voidless hermetic glass and internal Category I metallurgical bonds, this diode meets MIL-PRF-19500/427 military qualification. It is inherently radiation hard and offers low thermal resistance of 38°C/W (junction to lead at 3/8 inch lead length). The operating temperature range spans -65°C to +175°C, with a junction temperature range of -65°C to +200°C.
The 1N5614 is packaged in an axial through-hole form with tin/lead (Sn/Pb) termination finish and a cathode band for polarity identification. It is suitable for use in bridges, half-bridges, catch diodes, and general rectifier circuits where reliability is critical.
200V.
1A (at TA=55°C).
1.1V at 1A.
2µs.
Axial through-hole (voidless hermetic glass).
-65°C to +175°C.
30A (8.3ms half-sine).