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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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53 pcs
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53 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Reverse Recovery Time (trr) | |
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| Voltage | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N5551US is a standard recovery rectifier diode manufactured by Microchip Technology. It is designed for general purpose rectification applications requiring a reverse voltage rating of 400V and an average forward current of 3A. The diode features a maximum forward voltage of 1.2V at 9A test current and a typical reverse recovery time of 2 microseconds, classifying it as a standard recovery device with recovery times greater than 500ns.
This diode is housed in a surface mount SQ-MELF, E package with a D-5B supplier device package designation. It supports an operating junction temperature range from -65°C to 175°C, making it suitable for a wide range of environmental conditions. The standard recovery speed is appropriate for line frequency rectification and other applications where fast switching is not required.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.49 | $6.49 |
| 10+ | $6.39 | $6.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (Vr) is 400V.
The average rectified current (Io) is 3A.
The maximum forward voltage (Vf) is 1.2V at a test current of 9A.
The typical reverse recovery time (trr) is 2 microseconds.
It is available in a surface mount SQ-MELF, E package with supplier device package D-5B.
The operating junction temperature range is -65°C to 175°C.