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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Surge | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N5550 is a standard recovery rectifier diode manufactured by Microchip Technology. It is designed for general purpose rectification in circuits requiring a working peak reverse voltage of 200 V and an average forward current of 3 A. The diode features a forward voltage drop of 1.2 V at 9 A and a reverse recovery time of 2 µs, classifying it as a standard recovery type.
The device is housed in a hermetically sealed voidless-glass B Axial package with through-hole mounting, making it suitable for high-reliability applications. The operating junction temperature range spans -65°C to 175°C, providing robust performance under extreme conditions. The diode also offers a high surge current capability of 100 A (8.3 ms half sine).
Common applications include power supply rectification, bridge rectifiers, catch diodes, and other general purpose AC-to-DC conversion circuits where fast switching is not required.
The maximum working peak reverse voltage (Vr) is 200 V.
The average rectified forward current (Io) is 3 A, derated at +55°C.
The forward voltage (Vf) is 1.2 V maximum at 9 A.
The reverse recovery time (trr) is 2 µs, classified as standard recovery.
The device is available in a through-hole B Axial package.
The operating junction temperature range is -65°C to 175°C.