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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Forward Surge (Ifsm) | |
| Junction and Storage Temperature Range | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| Solder Temperature @ 10 s | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance, Junction to Lead | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N5418 is a fast recovery rectifier diode from the 1N5415-1N5420 series, manufactured by Microchip Technology. It is rated for a maximum reverse voltage of 400V and an average rectified current of 3A at +55°C, derating to 2A at +100°C. The device offers a fast reverse recovery time of 150ns, making it suitable for high-frequency rectification.
The diode features a forward voltage drop of 1.1V at 3A and a high forward surge current capability of 80A (8.3ms half-sine). It has a junction capacitance of 165pF at 4V and 1MHz. The device is hermetically sealed in a voidless glass axial package, providing high reliability for military and industrial applications.
The 1N5418 is qualified to MIL-PRF-19500/411 and is available in JAN, JANTX, JANTXV, and JANS levels. It is designed for use in power supplies, converters, and other circuits requiring fast switching and high surge tolerance. The through-hole axial package allows for easy mounting on PCBs.
The maximum DC reverse voltage is 400V.
The average rectified current is 3A at +55°C, derating to 2A at +100°C.
The maximum forward voltage is 1.1V at 3A.
The reverse recovery time is 150ns.
The 1N5418 is available in an axial through-hole package.
The forward surge current is 80A for an 8.3ms half-sine.
The junction and storage temperature range is -65°C to +175°C.