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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Rectified Forward Current (Io) | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Surge Current (IFSM) | |
| Forward Voltage | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Lead Style | |
| Military Grade | |
| Mounting Type | |
| Package / Case | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance, Junction to Lead | |
| Voltage | |
| Working Peak Reverse Voltage (Vrwm) |
The 1N5417 is a fast recovery rectifier diode from the 1N5415-1N5420 series, manufactured by Microchip Technology. It is designed for high-reliability applications requiring fast switching and low reverse recovery losses.
Key electrical specifications include a working peak reverse voltage of 200V, an average forward current rating of 3A at +55°C, and a fast reverse recovery time of 150ns. The forward voltage drop is typically 1.1V at 3A. The diode can withstand a forward surge current of 80A for 8.3ms half-sine, making it robust for transient conditions.
Packaged in an axial through-hole case, the device features voidless hermetically sealed glass construction for high reliability. It offers a junction and storage temperature range of -65°C to +175°C and a thermal resistance of 22°C/W from junction to lead. This diode is suitable for military, aerospace, and other high-reliability power rectification applications.
150 ns.
1.1 V.
3 A at +55°C.
200 V.
80 A at 8.3 ms half-sine.
-65°C to +175°C.
Through-hole mounting, axial package.