| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,495 pcs
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3495 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N5391 is a silicon rectifier diode designed for high current applications. It features a high current capability of 1.5 Amperes and a high surge current capability.
Key electrical characteristics include a maximum average forward current of 1.5A at 70°C and a peak forward surge current of 50A for 8.3ms. The diode offers a maximum forward voltage of 1.1V at 1.5A and a low DC reverse current of 5.0µA at 25°C. It can withstand a maximum repetitive peak reverse voltage of up to 1000V.
Packaged in a DO-41 molded plastic case, the 1N5391 has axial leads solderable per MIL-STD-202, Method 208. The epoxy used is UL94V-O rate flame retardant. The diode is suitable for various mounting positions and operates within a junction temperature range of -65°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum average forward current is 1.5A at 70°C with a 0.375" (9.5mm) lead length.
The maximum repetitive peak reverse voltage is 1000V.
The maximum forward voltage drop is 1.1V at a forward current of 1.5 Amps.
The 1N5391 is supplied in a DO-41 molded plastic case.
The junction temperature range is -65°C to +175°C.