| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
170,000 pcs
|
170000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Forward Current | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage | |
| Halogen Free | |
| Lead Style | |
| Maximum Repetitive Reverse Voltage | |
| Medical Grade | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Reverse Current | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage |
The 1N5282TR is a small signal diode manufactured by On Semiconductor. It is designed for general purpose rectification and switching applications. The device is rated for a maximum repetitive reverse voltage of 80V and an average forward current of 200mA. The forward voltage is typically 0.8V at 100mA, with a maximum of 0.9V. The reverse recovery time is 4ns, making it suitable for high-speed switching circuits. The diode also features a low reverse current of 100nA at 55V and a total capacitance of 2.5pF at 0V and 1MHz. The maximum power dissipation is 500mW with a junction-to-ambient thermal resistance of 300°C/W. The operating junction temperature range is up to 175°C, and the storage temperature range is -65°C to +200°C. The device is packaged in a DO-204AH (DO-35) axial lead through-hole package, with a standard package quantity of 10,000 units in tape and reel. It is RoHS3 compliant and lead-free (Pb-Free).
The maximum repetitive reverse voltage (VRRM) is 80V.
The average forward current (IF(AV)) is 200mA.
The forward voltage (VF) is typically 0.8V at 100mA, with a maximum of 0.9V.
The reverse recovery time (trr) is 4ns.
The device is packaged in a DO-204AH (DO-35) axial lead through-hole package.
The total capacitance (CT) is 2.5pF at 0V and 1MHz.
The operating junction temperature (TJ) maximum is 175°C.