| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,623 pcs
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1623 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The 1N5229BTR is a 4.3V nominal Zener diode from onsemi, part of the 1N5221B-1N5252B family. It offers ±5% tolerance and a power dissipation of 500mW, derated at 4.0mW/°C above 50°C. The device features a maximum impedance of 22Ω at 20mA (Zzt) and 2000Ω at 0.25mA (Zzk). Reverse leakage current is 5µA at 1V, and forward voltage is 1.2V at 200mA. The temperature coefficient is ±0.055%/°C. Operating and storage temperature range from -65°C to +200°C. Lead soldering temperature is 230°C for 10 seconds. The diode is housed in a DO-35 (DO-204AH) axial lead package for through-hole mounting, suitable for voltage regulation and reference applications in low-power circuits.
The nominal Zener voltage is 4.3V with a tolerance of ±5%.
The power dissipation is 500mW, derated at 4.0mW/°C above 50°C.
The forward voltage is 1.2V at a forward current of 200mA.
The device is available in a DO-35 (DO-204AH) axial lead through-hole package.
The reverse leakage current is 5µA at 1V reverse voltage.
The operating junction temperature range is -65°C to +200°C.
The temperature coefficient is ±0.055%/°C.