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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,888 pcs
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4888 pcs | On Request | 1 | On Request | On Request | 323 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - Reverse Leakage @ Vr | |
| Diode Type | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Temperature | |
| Operating Temperature - Junction | |
| Package / Case | |
| Power Dissipation (Max) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N4933GP is a fast recovery rectifier diode manufactured by On Semiconductor. It is rated for a maximum repetitive reverse voltage of 50V and an average rectified forward current of 1A. The device exhibits a fast reverse recovery time of 150 ns, making it suitable for high-frequency switching applications. It can handle a non-repetitive peak forward surge current of 30A.
The diode is housed in a DO-41 (DO-204AL) axial leaded package, designed for through-hole mounting. The junction operating temperature range is -65°C to 175°C, with a maximum power dissipation of 2.73W. The thermal resistance from junction to ambient is 55°C/W.
Key electrical characteristics include a forward voltage drop of 1.2V at 1A forward current, a reverse leakage current of 5 µA at rated voltage and 25°C, and a total capacitance of 12pF at 4V and 1MHz. The device is glass passivated for high reliability.
50V.
1A.
1.2V at 1A.
150ns.
DO-41 (DO-204AL) axial leaded package.
30A (non-repetitive).
-65°C to 175°C.