| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92 pcs
|
92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel | |
| Thermal Resistance |
The 1N4682 is a Silicon Epitaxial Planar Z-Diode manufactured by Vishay Semiconductors. This component is designed for voltage stabilization applications.
Key electrical characteristics include a maximum power dissipation of 500 mW at TL=25°C and a maximum forward voltage of 1.5 V at 100 mA. The Zener current is specified in terms of PV/VZ.
Thermal specifications include a maximum junction temperature of 175°C and a storage temperature range of -65°C to +175°C. The thermal resistance from junction to ambient is 300 K/W.
This diode is suitable for various electronic circuits requiring stable voltage references.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum power dissipation is 500 mW at TL=25°C.
The maximum forward voltage is 1.5 V at 100 mA.
The junction temperature is 175°C maximum, and the storage temperature range is -65°C to +175°C.
The thermal resistance from junction to ambient is 300 K/W.