| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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159,790 pcs
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159790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
71,020 pcs
|
71020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4454TR is a high conductance ultra fast diode from On Semiconductor, sourced from Process 1R. It is designed for general purpose switching applications requiring fast recovery times. The diode has a working inverse voltage of 50V and an average rectified current of 200mA, with a DC forward current capability of 400mA. It features a low forward voltage drop of 1V maximum at 10mA and a reverse recovery time of 4ns. The device is housed in a hermetically sealed DO-35 (DO-204AH) axial leaded glass package, suitable for through-hole mounting. It is lead-free (Pb-Free) and RoHS compliant. The operating junction temperature range is up to 175°C, with a storage temperature range of -65°C to +200°C. Typical applications include high-speed switching, signal rectification, and protection circuits.
The reverse voltage (VRRM) is 50V.
The average rectified current (Io) is 200mA.
The forward voltage is 1V maximum at 10mA forward current.
The reverse recovery time (trr) is 4ns at IF=10mA, VR=1V, Irr=1mA, RL=100Ω.
The 1N4454TR is available in a DO-35 (DO-204AH) axial leaded glass package.
The maximum operating junction temperature is 175°C.
The datasheet indicates Pb-Free, and it is listed as RoHS3 Compliant (unverified).