| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Forward Current | |
| Forward Voltage | |
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The 1N4454 is a small-signal diode manufactured by Vishay Semiconductors. It is designed with silicon epitaxial planar technology, offering fast switching capabilities.
Key electrical characteristics include a peak reverse voltage of 100V and a maximum average rectified current of 150mA under half-wave rectification. The diode has a maximum forward voltage drop of 1.0V at 10mA and a low leakage current of 100nA at 50V.
This diode comes in a DO-35 glass case, weighing approximately 0.13g. It is available in tape and reel packaging options, suitable for automated assembly processes. The operating junction temperature can reach up to 175°C.
Applications for this diode include general-purpose rectification and switching circuits where fast response times and reliable performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum peak reverse voltage is 100V and the maximum reverse voltage is 75V.
The maximum average rectified forward current is 150mA under half-wave rectification with resistive load at 25°C.
The maximum forward voltage drop is 1V at a forward current of 10mA.
The maximum reverse recovery time is 4ns from IF=10mA to IR=1mA, VR=6V, RL=100Ω.
The diode comes in a DO-35 glass case with through-hole mounting.
The maximum leakage current is 100nA at VR=50V and 5µA at VR=75V.
The capacitance is maximum 2pF at VF=VR=0V.