| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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159 pcs
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159 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4449 is a high-speed switching diode manufactured by ST. It is designed for applications requiring rapid switching speeds, with a maximum reverse recovery time of 4 ns. This diode offers a maximum reverse voltage of 75V and a peak reverse voltage of 100V, making it suitable for various signal processing and switching circuits.
The device has a maximum forward DC current of 200mA and a surge forward current capability of 2A at 1µs. Its power dissipation is rated at 500mW at 25°C ambient temperature. The maximum junction temperature is 200°C, with a storage temperature range from -65°C to +200°C.
Packaged in a DO-35 Glass Case, the 1N4449 is a through-hole component. Its mechanical data indicates a weight of approximately 0.13g. The diode capacitance is a maximum of 2pF at 1MHz and VR=0V.
This diode is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. It is also noted as Pb/RoHS Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak reverse voltage of the 1N4449 diode is a maximum of 100 V.
The maximum forward DC current for the 1N4449 is 200 mA.
The reverse recovery time of the 1N4449 is a maximum of 4 ns.
The 1N4449 diode is supplied in a DO-35 Glass Case.
The 1N4449 diode is RoHS3 Compliant.