SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,800 pcs
|
9800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The 1N4449 is a high-speed switching diode manufactured by Texas Instruments, designed for applications requiring fast switching characteristics. It features a maximum reverse voltage of 75V and a peak reverse voltage of 100V, making it suitable for various signal processing tasks.
With a maximum forward DC current rating of 200mA and a surge forward current of 2A, this diode can handle moderate current loads. Its power dissipation is rated at 500mW at 25°C ambient temperature, with a maximum junction temperature of 200°C.
The diode exhibits a high switching speed with a maximum reverse recovery time of 4ns. Electrical characteristics include a forward voltage drop of 0.73V maximum at 5mA and a diode capacitance of 2pF maximum at 1MHz and 0V reverse voltage.
Packaged in a standard DO-35 glass case, the 1N4449 is designed for through-hole mounting with axial terminations. Its mechanical data indicates a weight of approximately 0.13g.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the 1N4449 diode is 75 V.
The peak reverse voltage of the 1N4449 is 100 V.
The maximum forward DC current for the 1N4449 is 200 mA.
The reverse recovery time of the 1N4449 diode is a maximum of 4 ns.
The 1N4449 diode is supplied in a DO-35 glass case.
The maximum power dissipation for the 1N4449 diode is 500 mW at 25°C.
The maximum junction temperature for the 1N4449 diode is 200°C.
