| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Forward Current | |
| Forward Voltage | |
| Mounting Type | |
| Output Current | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Tape & Reel |
The 1N4448 is a small signal diode from NXP Semiconductors, designed for various electronic applications. This diode features a reverse standoff voltage of 100V and can handle a forward current of up to 300mA. Its fast switching characteristics are highlighted by a reverse recovery time of 4ns.
The diode has a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 175°C. It is packaged in an axial package and designed for through-hole mounting.
Key electrical specifications include a forward voltage of 620mV at 300mA and a capacitance of 2pF. The maximum forward surge current is rated at 2A.
This component is suitable for applications requiring fast switching and reliable rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse standoff voltage for the 1N4448 is 100V.
The forward voltage of the 1N4448 is 620mV at 300mA.
The maximum forward current for the 1N4448 is 300mA.
The reverse recovery time of the 1N4448 is 4ns.
The maximum power dissipation for the 1N4448 is 500mW.
The operating temperature range for the 1N4448 is -55°C to 175°C.
The 1N4448 is in an axial package.