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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
109 pcs
|
109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Current - DC Forward (If) (Max) | |
| Diode Type | |
| Forward Voltage @ 100mA | |
| Forward Voltage @ 10mA | |
| Forward Voltage @ 1mA | |
| Forward Voltage @ 200mA | |
| Forward Voltage @ 50mA | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Package / Case | |
| Peak Forward Surge Current (1s) | |
| Peak Forward Surge Current (1µs) | |
| Reverse Breakdown Voltage | |
| Reverse Current (IR) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Total Device Dissipation | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) | |
| Voltage - Forward (Vf) (Max) @ If |
The 1N4150 is a high conductance ultra-fast switching diode manufactured by On Semiconductor. It is designed for general-purpose rectification and switching applications requiring low forward voltage and fast recovery.
Key electrical specifications include a maximum reverse voltage (WIV) of 50V, an average rectified current of 200mA, and a DC forward current rating of 400mA. The forward voltage is typically 1V at 200mA, with a minimum forward voltage of 0.87V at the same current. The device features a reverse recovery time of 6ns, making it suitable for high-speed switching circuits.
The 1N4150 is housed in a DO-35 (DO-204AH) axial-lead through-hole package. It has a total device dissipation of 500mW and a junction-to-ambient thermal resistance of 300°C/W. The operating junction temperature range is up to 175°C, with a storage temperature range of -65°C to +200°C.
The maximum reverse voltage (Working Inverse Voltage) is 50V.
The average rectified current (Io) is 200mA.
The forward voltage is 1V maximum at 200mA, with a typical minimum of 0.87V.
The reverse recovery time (trr) is 6ns.
The 1N4150 is available in a DO-35 (DO-204AH) axial-lead through-hole package.
The operating junction temperature is up to 175°C.
The diode capacitance is 2.5pF at 0V reverse bias and 1MHz.