| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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35,000 pcs
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35000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4149 is a small signal fast recovery diode manufactured by onsemi. It is designed for general purpose switching applications requiring high speed and low leakage. The diode has a maximum repetitive reverse voltage of 100V and an average rectified forward current of 500mA.
Key electrical characteristics include a forward voltage of 1V at 10mA, reverse leakage current of 25nA at 20V, and a reverse recovery time of just 4ns. The device can handle non-repetitive peak forward surge currents of 1A for a 1-second pulse and 4A for a 1-microsecond pulse. Total capacitance is 2pF at 0V and 1MHz.
The 1N4149 is housed in an axial-lead DO-35 (DO-204AH) through-hole package, making it suitable for general purpose switching and fast switching applications. It has a maximum power dissipation of 500mW and a junction temperature rating of 175°C.
The maximum repetitive peak reverse voltage (VRRM) is 100V.
The average rectified forward current (IF(AV)) is 500mA.
The forward voltage is 1V at a forward current of 10mA.
The reverse recovery time is 4ns, tested with IF=10mA, VR=6V, Irr=1mA, RL=100Ω.
The 1N4149 is available in a DO-204AH (DO-35) axial lead through-hole package.
The reverse leakage current is 25nA at 20V and 25°C.
The maximum operating junction temperature is 175°C, and the storage temperature range is -65°C to +200°C.