1N4149 The 1N4149 is a 100V, 500mA small signal fast recovery diode in a DO-35 through-hole package. It features a 4ns reverse recovery time and low forward voltage of 1V at 10mA.
Mfr Part #:

1N4149

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 1N4149 is a 100V, 500mA small signal fast recovery diode in a DO-35 through-hole package. It features a 4ns reverse recovery time and low forward voltage of 1V at 10mA.
Total Stock: 35,000 pcs

1N4149 Available from 1 distributor

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1N4149 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Forward Current (IF(AV))
Breakdown Voltage (VBR) (Minimum @ 100 µA)
Breakdown Voltage (VBR) (Minimum @ 5 µA)
Capacitance @ Vr, F
Current
Forward Voltage (Vf)
Junction Temperature (TJ)
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Package / Case
Peak Forward Surge Current (IFSM) (@ 1 µs pulse)
Power Dissipation (PD)
Reverse Leakage Current (IR)
Reverse Recovery Time (trr)
Reverse Voltage (Vrrm)
Speed
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Termination Style
Thermal Resistance Junction to Ambient (RθJA)
Total Capacitance (CT)
Voltage

1N4149 Description

Short technical summary and product information.

The 1N4149 is a small signal fast recovery diode manufactured by onsemi. It is designed for general purpose switching applications requiring high speed and low leakage. The diode has a maximum repetitive reverse voltage of 100V and an average rectified forward current of 500mA.

 

Key electrical characteristics include a forward voltage of 1V at 10mA, reverse leakage current of 25nA at 20V, and a reverse recovery time of just 4ns. The device can handle non-repetitive peak forward surge currents of 1A for a 1-second pulse and 4A for a 1-microsecond pulse. Total capacitance is 2pF at 0V and 1MHz.

 

The 1N4149 is housed in an axial-lead DO-35 (DO-204AH) through-hole package, making it suitable for general purpose switching and fast switching applications. It has a maximum power dissipation of 500mW and a junction temperature rating of 175°C.

1N4149 Quick Information

Product Type: Small Signal Fast Recovery Diode
Series: 1N4149
Canonical Name: 1N4149 Small Signal Fast Recovery Diode
Subcategory: Rectifier Diodes

1N4149 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

1N4149 Features

  • Fast recovery time of 4 nanoseconds.
  • 100V maximum repetitive reverse voltage.
  • 500mA average rectified forward current.
  • Low forward voltage of 1V at 10mA.
  • DO-35 through-hole axial lead package.

1N4149 Applications

  • High-speed switching power supply circuits.
  • Signal rectification in low-power electronics.
  • Reverse polarity protection in portable devices.
  • Clamping and snubber circuits in DC-DC converters.

1N4149 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the 1N4149?

The maximum repetitive peak reverse voltage (VRRM) is 100V.

What is the forward current rating of the 1N4149?

The average rectified forward current (IF(AV)) is 500mA.

What is the forward voltage of the 1N4149?

The forward voltage is 1V at a forward current of 10mA.

What is the reverse recovery time of the 1N4149?

The reverse recovery time is 4ns, tested with IF=10mA, VR=6V, Irr=1mA, RL=100Ω.

What package is the 1N4149 available in?

The 1N4149 is available in a DO-204AH (DO-35) axial lead through-hole package.

What is the reverse leakage current of the 1N4149?

The reverse leakage current is 25nA at 20V and 25°C.

What is the operating junction temperature range of the 1N4149?

The maximum operating junction temperature is 175°C, and the storage temperature range is -65°C to +200°C.

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