| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
380 pcs
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380 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4148 is a silicon epitaxial planar diode designed for extreme fast switching applications. It is packaged in a DO-35 (DO-204AH) case and features a black cathode band.
Key electrical characteristics include a repetitive peak reverse voltage of 100V and a reverse voltage of 75V. The peak forward surge current is rated at 2A for a 1μs pulse, with a forward continuous current of 300mA and an average forward current of 150mA. The diode exhibits a typical forward voltage of 1V at 10mA and a low reverse current of 25nA at 20V.
Thermal specifications include a maximum junction temperature of 175°C and a storage temperature range of -65°C to +150°C. The power dissipation is 500mW at TL ≤ 25°C. The diode capacitance is typically 4pF at 1MHz.
This component is electrically equivalent to the 1N914 diode. It is available in tape and reel or ammopack packaging options.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage is 100V.
The forward continuous current is 300mA.
The peak forward surge current is 2A.
The typical reverse recovery time is 4ns.
The 1N4148 is supplied in a DO-35 (DO-204AH) case.